to-252 parameter symbol typ unit repetitive peak off-state voltages v drm v rrm 600 v average on-state current i t(av) 2.6 a rms on-state current i t(rms) 4.0 a non-repetitive peak on-state current i tsm 25 a max. operating junction temperature t j 110 o c storage temperature t stg -45~150 o c MCR708A description parameter symbol test conditions min typ max unit repetitive peak off-state voltages v drm v rrm 600 v average on-state current i t(av) half sine wave; t mb < 103 o c 2.6 a rms on-state current i t(rms) all conduction angles 4.0 a on-state voltage v tm i tm =8.2a,tp=380 s 2.2 v holding current i h v d =12 v; i gt = 0.1 a 5.0 ma latching current i l v d =12 v; i gt = 0.1 a 8.0 ma gate trigger current i gt v d =12 v; i t = 0.1 a 10 75 ua gate trigger voltage v gt v d =12 v; i t = 0.1 a 1.0 v silicon controlled rectifiers pnpn devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. product specification absolute maximum ratings electrical characteristics ( ta = 25 c) o ( ta = 25 c) o g k a tiger electronic co.,ltd
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